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"Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques ..."
N. Ishihara et al. (2023)
- N. Ishihara, Y. Shimada, T. Ochi, S. Seto, H. Matsuo, H. Yamashita, S. Morita, M. Ukishima, K. Uejima, Y. Arayashiki, S. Kajiwara, A. Murayama, K. Nishiyama, K. Sugimae, S. Mori, Y. Saito, T. Shundo, A. Maeda, H. Kamiya, Y. Uchiyama, M. Fujiwara, F. Aiso, K. Sekine, N. Ohtani:
Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory. VLSI Technology and Circuits 2023: 1-2
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