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"First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory ..."

Asir Intisar Khan et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830348

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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  - conf/vlsit/KhanPWWKKRNASLO22
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Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M. Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H.-S. Philip Wong, Kenneth E. Goodson, Eric Pop:
First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm²) and Low Resistance Drift (~0.002 at 105°C). VLSI Technology and Circuits 2022: 310-311

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