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"First Demonstration of High-Sensitivity (NEP 1fW1/2) ..."

Yuan Qin et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830520

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-04

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  dblp key:
  - conf/vlsit/QinLYYWDZXZLLL22
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  - https://dblp.org/rec/conf/vlsit/QinLYYWDZXZLLL22
Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, Feihong Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu:
First Demonstration of High-Sensitivity (NEP 1fW^1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors. VLSI Technology and Circuits 2022: 345-346

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