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"A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency ..."
Hyunjin Shin et al. (2022)
- Hyunjin Shin, Sangkyung Won, Dohui Kim, Byunghun Choi, Gyusung Kim, Myeonghee Oh, Jaeseung Choi, Jongwook Kye:
A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm2 at 0.85V. VLSI Technology and Circuits 2022: 132-133
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