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"Effect of MOSFET gate-to-drain parasitic capacitance on class-E power ..."

Xiuqin Wei et al. (2010)

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DOI: 10.1109/ISCAS.2010.5537946

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Xiuqin Wei, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, Marian K. Kazimierczuk:
Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier. ISCAS 2010: 3200-3203

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