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"17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, ..."

Taejoong Song et al. (2016)

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DOI: 10.1109/ISSCC.2016.7418029

access: closed

type: Conference or Workshop Paper

metadata version: 2020-08-14

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  dblp key:
  - conf/isscc/SongRPKJYBCKLKK16
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  - https://dblp.org/rec/conf/isscc/SongRPKJYBCKLKK16
Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim:
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. ISSCC 2016: 306-307

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