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"Heavy ion micro-beam study of single-event transient (SET) in SiGe ..."

Jinxin Zhang et al. (2017)

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DOI: 10.1007/S11432-017-9249-6

access: closed

type: Journal Article

metadata version: 2023-09-30

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  - https://dblp.org/rec/journals/chinaf/ZhangGZHLYWZ17
Jinxin Zhang, Hongxia Guo, Fengqi Zhang, Chaohui He, Pei Li, Yunyi Yan, Hui Wang, Linxia Zhang:
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Sci. China Inf. Sci. 60(12): 120404:1-120404:3 (2017)

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