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ORCID"High-speed gate drive circuit for SiC MOSFET by GaN HEMT."
Kohei Nagaoka et al. (2015)
- Kohei Nagaoka, Kentaro Chikamatsu, Atsushi Yamaguchi, Ken Nakahara, Takashi Hikihara:
High-speed gate drive circuit for SiC MOSFET by GaN HEMT. IEICE Electron. Express 12(11): 20150285 (2015)
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