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"Characterisation of P floating islands for 150-200 V FLYMOSFETs."

Yann Weber et al. (2007)

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DOI: 10.1049/IET-CDS:20060371

access: closed

type: Journal Article

metadata version: 2020-09-10

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  - journals/iet-cds/WeberRRMSDS07
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  - https://dblp.org/rec/journals/iet-cds/WeberRRMSDS07
Yann Weber, Jaume Roig, Jean-Michel Reynes, Frederic Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse:
Characterisation of P floating islands for 150-200 V FLYMOSFETs. IET Circuits Devices Syst. 1(5): 333-340 (2007)

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