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"A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison."

Todd McKenzie, Yiming Li (2006)

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DOI: 10.1504/IJCSE.2006.012766

access: closed

type: Journal Article

metadata version: 2020-07-30

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  - https://dblp.org/rec/journals/ijcse/McKenzieL06
Todd McKenzie, Yiming Li:
A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison. Int. J. Comput. Sci. Eng. 2(3/4): 144-147 (2006)

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