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"Trades-off between lithography line edge roughness and error-correcting ..."

Pavel Poliakov et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.09.037

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - journals/mr/PoliakovBPMGVHD12
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  - https://dblp.org/rec/journals/mr/PoliakovBPMGVHD12
Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene:
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. Microelectron. Reliab. 52(3): 525-529 (2012)

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