Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With ..."

Younghwi Yang et al. (2015)

> Home

Details and statistics

DOI: 10.1109/TVLSI.2014.2367234

access: closed

type: Journal Article

metadata version: 2020-03-11

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tvlsi/YangPSWYJ15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tvlsi/YangPSWYJ15
Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung:
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23(11): 2748-2752 (2015)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.