"A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer ..."

Yan Li et al. (2025)

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DOI: 10.1109/ACCESS.2025.3602811

access: open

type: Journal Article

metadata version: 2025-09-11

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Yan Li, Jiayi Zhang, Haoyan Liu, Yongliang Li:
A Novel SiGe Nanosheet Transistor With Channel Release Stopping Layer Structure for Process Variations Suppression and Circuit Performance Improvement. IEEE Access 13: 150498-150504 (2025)

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