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ORCID"An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process."
Jaewon Park et al. (2021)
- Jaewon Park, Jae Hoon Lee, Sang-Kil Park, Ki Chul Chun
, Kyomin Sohn, Sungho Kang:
An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process. IEEE Access 9: 33487-33497 (2021)
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