"Single event upset rate modeling for ultra-deep submicron complementary ..."

Liang He et al. (2016)

> Home

Details and statistics

DOI: 10.1007/S11432-015-5362-2

access: closed

type: Journal Article

metadata version: 2022-06-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/HeCSJDLSL16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/HeCSJDLSL16
Liang He, Hua Chen, Peng Sun, Xiaofei Jia, Chongguang Dai, Jing Liu, Long Shao, Zhaoqing Liu:
Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. Sci. China Inf. Sci. 59(4): 042402:1-042402:11 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.