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"Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs ..."

Haochen Zhang et al. (2023)

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DOI: 10.1007/S11432-022-3694-4

access: closed

type: Journal Article

metadata version: 2024-03-11

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  - journals/chinaf/ZhangSHYLXWZYFKS23
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  - https://dblp.org/rec/journals/chinaf/ZhangSHYLXWZYFKS23
Haochen Zhang, Yue Sun, Kunpeng Hu, Lei Yang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Huabin Yu, Shi Fang, Yang Kang, Haiding Sun:
Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers. Sci. China Inf. Sci. 66(8) (2023)

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