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"Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ..."

Albert Lu et al. (2022)

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DOI: 10.48550/ARXIV.2208.01142

access: open

type: Informal or Other Publication

metadata version: 2022-08-09

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  dblp key:
  - journals/corr/abs-2208-01142
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  persistent URL:
  - https://dblp.org/rec/journals/corr/abs-2208-01142
Albert Lu, Jordan Marshall, Yifan Wang, Ming Xiao, Yuhao Zhang, Hiu Yung Wong:
Vertical GaN Diode BV Maximization through Rapid TCAD Simulation and ML-enabled Surrogate Model. CoRR abs/2208.01142 (2022)

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