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"Design and characteristics of n-channel insulated-gate field-effect ..."

Dale L. Critchlow, Robert H. Dennard, Stanley Schuster (2000)

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DOI: 10.1147/RD.441.0070

access: closed

type: Journal Article

metadata version: 2020-03-13

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Dale L. Critchlow, Robert H. Dennard, Stanley Schuster:
Design and characteristics of n-channel insulated-gate field-effect transistors. IBM J. Res. Dev. 44(1): 70-83 (2000)

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