"A novel high-voltage trench gate insulated gate bipolar transistor with ..."

Bin Zhang et al. (2013)

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DOI: 10.1587/ELEX.10.20130719

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/ZhangHZZZWL13
Bin Zhang, Yan Han, Shifeng Zhang, Dazhong Zhu, Wei Zhang, Huanting Wu, Fang Liu:
A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer. IEICE Electron. Express 10(21): 20130719 (2013)

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