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"Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device ..."

Yasutaka Maeda et al. (2017)

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DOI: 10.1587/TRANSELE.E100.C.463

access: closed

type: Journal Article

metadata version: 2022-10-02

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  - journals/ieicet/MaedaOGO17
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/MaedaOGO17
Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi:
Effect of Nitrogen-Doped LaB₆ Interfacial Layer on Device Characteristics of Pentacene-Based OFET. IEICE Trans. Electron. 100-C(5): 463-467 (2017)

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