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"1.2 kV 4H-SiC planar power MOSFETs with a low-K dielectric in central gate."

Dong Liu et al. (2022)

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DOI: 10.1049/CDS2.12115

access: closed

type: Journal Article

metadata version: 2022-08-08

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  - journals/iet-cds/LiuLOLTWH22
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  - https://dblp.org/rec/journals/iet-cds/LiuLOLTWH22
Dong Liu, Mingyue Li, Yangjie Ou, Zhong Lan, Maosen Tang, Weibo Wang, Xiarong Hu:
1.2 kV 4H-SiC planar power MOSFETs with a low-K dielectric in central gate. IET Circuits Devices Syst. 16(5): 419-426 (2022)

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