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"Hybrid AlGaN/GaN high-electron mobility transistor: design and simulation."

Sumit Verma et al. (2018)

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DOI: 10.1049/IET-CDS.2017.0025

access: closed

type: Journal Article

metadata version: 2022-01-03

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  - https://dblp.org/rec/journals/iet-cds/VermaLAA18
Sumit Verma, Sajad A. Loan, Abdul Rahman M. Alamoud, Abdullah G. Alharbi:
Hybrid AlGaN/GaN high-electron mobility transistor: design and simulation. IET Circuits Devices Syst. 12(1): 33-39 (2018)

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