"A near-threshold 7T SRAM cell with high write and read margins and low ..."

Mohammad Ansari et al. (2015)

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DOI: 10.1016/J.VLSI.2015.02.002

access: closed

type: Journal Article

metadata version: 2023-03-21

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Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram:
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies. Integr. 50: 91-106 (2015)

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