"Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell ..."

Gopavaram Suneel Kumar, Gannera Mamatha (2023)

> Home

Details and statistics

DOI: 10.1142/S0218126623500032

access: closed

type: Journal Article

metadata version: 2023-04-29

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jcsc/KumarM23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jcsc/KumarM23
Gopavaram Suneel Kumar, Gannera Mamatha:
Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell Design Using Enhanced Gate Diffusion Input BWGCNTFET. J. Circuits Syst. Comput. 32(1): 2350003:1-2350003:21 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.