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"A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at ..."

Melina Apostolidou et al. (2009)

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DOI: 10.1109/JSSC.2009.2020680

access: closed

type: Journal Article

metadata version: 2020-08-30

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Melina Apostolidou, Mark P. van der Heijden, Domine M. W. Leenaerts, Jan Sonsky, Anco Heringa, Iouri Volokhine:
A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off. IEEE J. Solid State Circuits 44(5): 1372-1379 (2009)

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