"A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ..."

Hung-Hsi Hsu et al. (2025)

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DOI: 10.1109/JSSC.2024.3470211

access: closed

type: Journal Article

metadata version: 2025-03-07

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Hung-Hsi Hsu, Tai-Hao Wen, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Ashwin Sanjay Lele, Bo Zhang, Ping-Sheng Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device. IEEE J. Solid State Circuits 60(1): 171-183 (2025)

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