"A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET ..."

Noboru Ishihara et al. (1992)

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DOI: 10.1109/4.126543

access: closed

type: Journal Article

metadata version: 2025-02-03

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Noboru Ishihara, Eiichi Sano, Yuhki Imai, Hiroyuki Kikuchi, Yasuro Yamane:
A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module. IEEE J. Solid State Circuits 27(4): 554-562 (1992)

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