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"512-Mb PROM with a three-dimensional array of diode/antifuse memory cells."

Mark Johnson et al. (2003)

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DOI: 10.1109/JSSC.2003.818147

access: closed

type: Journal Article

metadata version: 2022-04-20

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  - https://dblp.org/rec/journals/jssc/JohnsonABCFFIKL03
Mark Johnson, Ali Al-Shamma, Derek Bosch, Matthew Crowley, Michael Farmwald, Luca Fasoli, Alper Ilkbahar, Bendik Kleveland, Thomas H. Lee, Tz-Yi Liu, Quang Nguyen, Roy Scheuerlein, Kenneth So, Tyler Thorp:
512-Mb PROM with a three-dimensional array of diode/antifuse memory cells. IEEE J. Solid State Circuits 38(11): 1920-1928 (2003)

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