"8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology."

Uksong Kang et al. (2010)

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DOI: 10.1109/JSSC.2009.2034408

access: closed

type: Journal Article

metadata version: 2020-08-30

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Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun:
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits 45(1): 111-119 (2010)

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