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"A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput."

KwangJin Lee et al. (2008)

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DOI: 10.1109/JSSC.2007.908001

access: closed

type: Journal Article

metadata version: 2020-08-30

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  - journals/jssc/LeeCCKCOLKPWPRC08
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  - https://dblp.org/rec/journals/jssc/LeeCCKCOLKPWPRC08
KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. IEEE J. Solid State Circuits 43(1): 150-162 (2008)

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