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"A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 ..."

Yan Li et al. (2009)

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DOI: 10.1109/JSSC.2008.2007154

access: closed

type: Journal Article

metadata version: 2023-09-14

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  - journals/jssc/LiLFPKPSNMHKHYK09
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  persistent URL:
  - https://dblp.org/rec/journals/jssc/LiLFPKPSNMHKHYK09
Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul-Adrian Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. IEEE J. Solid State Circuits 44(1): 195-207 (2009)

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