"Three-dimensional design of SOI LDMOS with high-k film trench and L-shaped ..."

Yue Hu et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106571

access: closed

type: Journal Article

metadata version: 2025-02-14

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Yue Hu, Tianci Wang, Changmiao Wu, Jing Wang, Yuhua Cheng, Wen-Sheng Zhao, Gaofeng Wang:
Three-dimensional design of SOI LDMOS with high-k film trench and L-shaped gate. Microelectron. J. 157: 106571 (2025)

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