"Temperature rise detection in GaN high-electron-mobility transistors via ..."

Xiujuan Huang et al. (2024)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2024.106200

access: closed

type: Journal Article

metadata version: 2024-05-31

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/HuangGWFZ24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/HuangGWFZ24
Xiujuan Huang, Chunsheng Guo, Qian Wen, Shiwei Feng, Yamin Zhang:
Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages. Microelectron. J. 148: 106200 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.