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"Electronic transport through GaN/AlN single barriers: Effect of ..."

S. Leconte, L. Gerrer, Eva Monroy (2009)

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DOI: 10.1016/J.MEJO.2008.07.066

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Leconte, L. Gerrer, Eva Monroy:
Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. Microelectron. J. 40(2): 339-341 (2009)

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