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"9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with ..."

Mengxiao Lian et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105828

access: closed

type: Journal Article

metadata version: 2023-06-07

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Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang:
9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. Microelectron. J. 137: 105828 (2023)

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