"A novel Ω-SOI Gate-All-Around FET with doping free load-Si and ..."

Longyu Sun et al. (2025)

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DOI: 10.1016/J.MEJO.2024.106534

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type: Journal Article

metadata version: 2025-05-01

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Longyu Sun, Haoyan Liu, Xin Wang, Xiaofeng Jia, Jiayi Zhang, Yongliang Li:
A novel Ω-SOI Gate-All-Around FET with doping free load-Si and two-step wet etching achieving superior leakage suppression and short-channel effects immunity. Microelectron. J. 156: 106534 (2025)

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