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"Double-gated ferroelectric-gate field-effect-transistor for multi-bit ..."

Zhe Wang et al. (2024)

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DOI: 10.1016/J.MEJO.2023.106030

access: closed

type: Journal Article

metadata version: 2024-01-21

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Zhe Wang, Yan Liu, Jiuren Zhou, Genquan Han:
Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories. Microelectron. J. 143: 106030 (2024)

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