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"Lifetime prediction and analysis of AlGaN/GaN HEMT devices under ..."

Baozhu Wang et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105370

access: closed

type: Journal Article

metadata version: 2022-10-02

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Baozhu Wang, Jinyuan Zhao, Ming Zhang, Lin Yang, Jianchao Wang, Weimin Hou:
Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress. Microelectron. J. 121: 105370 (2022)

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