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"Improvement of reverse conduction characteristic and single event effect ..."

Xintong Xie et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106091

access: closed

type: Journal Article

metadata version: 2024-02-29

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Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo:
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectron. J. 144: 106091 (2024)

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