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"High voltage GaN vertical FinFET with a compatible integrated fin diode ..."

Zhijia Zhao et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105781

access: closed

type: Journal Article

metadata version: 2023-06-07

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Zhijia Zhao, Yuxi Wei, Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Xiaorong Luo, Bo Zhang:
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. Microelectron. J. 136: 105781 (2023)

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