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"Gate leakage-current analysis and modelling of planar and trench power SiC ..."

F. Boige, Frédéric Richardeau (2017)

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DOI: 10.1016/J.MICROREL.2017.06.084

access: closed

type: Journal Article

metadata version: 2023-09-30

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F. Boige, Frédéric Richardeau:
Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 76-77: 532-538 (2017)

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