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"Ensure an original and safe "fail-to-open" mode in planar and trench power ..."

F. Boige et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.07.026

access: closed

type: Journal Article

metadata version: 2023-09-30

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F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane:
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. 88-90: 598-603 (2018)

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