"Improved performance of ITO/TiO2/HfO2/Pt random ..."

Tengfei Deng et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.11.018

access: closed

type: Journal Article

metadata version: 2020-02-22

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Tengfei Deng, Cong Ye, Jiaji Wu, Pin He, Hao Wang:
Improved performance of ITO/TiO₂/HfO₂/Pt random resistive accessory memory by nitrogen annealing treatment. Microelectron. Reliab. 57: 34-38 (2016)

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