"Scanning spreading resistance microscopy for failure analysis of nLDMOS ..."

Stefan Doering et al. (2014)

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DOI: 10.1016/J.MICROREL.2014.07.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick:
Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. Microelectron. Reliab. 54(9-10): 2128-2132 (2014)

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