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"Resistive switching behavior of a CeO2 based ReRAM cell ..."

Chunmeng Dou et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.10.019

access: closed

type: Journal Article

metadata version: 2021-10-14

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  - https://dblp.org/rec/journals/mr/DouKATNSNHI12
Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012)

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