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"High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs ..."

Clément Fleury et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.010

access: closed

type: Journal Article

metadata version: 2024-02-05

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Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany:
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55(9-10): 1687-1691 (2015)

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