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"Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias ..."

Sudip Ghosh et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.07.045

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/GhoshGKMMZNRDG11
Sudip Ghosh, Brice Grandchamp, G. A. Koné, François Marc, Cristell Maneux, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin:
Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design. Microelectron. Reliab. 51(9-11): 1736-1741 (2011)

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