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"Analytical investigation of dead space effect under near-breakdown ..."

Y. L. Goh, Duu Sheng Ong (2004)

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DOI: 10.1016/J.MICROREL.2004.04.001

access: closed

type: Journal Article

metadata version: 2021-10-14

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Y. L. Goh, Duu Sheng Ong:
Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors. Microelectron. Reliab. 44(7): 1199-1202 (2004)

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