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"Statistical simulation of random dopant induced threshold voltage ..."

Urban Kovac et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.06.027

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/KovacRMRRA08
Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov:
Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectron. Reliab. 48(8-9): 1572-1575 (2008)

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