"AlGaN/GaN HEMT device reliability and degradation evolution: Importance of ..."

Martin Kuball et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.08.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra:
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. 51(2): 195-200 (2011)

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